{"id":"arxiv/2609.35624","url":"https://arxiv.org/abs/2609.35624","tags":["physics.ins-det","quant-ph"],"score":0,"title":"Electrothermal behavior of superconducting nanowires buried in a commercial CMOS process","domain":"physics.ins-det","source":"arxiv","authors":["Mohamed Gharib","Leonid Popryho","Salma Abdelzaher","Tejas Guruswamy","Tomas Polakovic","Umeshkumar Patel","Orlando Quaranta","Thomas Cecil","Clarence Chang","Yu-Sheng Chen","Thomas H. Swift","Grayson M. Noah","Alberto Gomez-Saiz","John J. L. Morton","M. Fernando Gonzalez-Zalba","Antonino Miceli","Inna Partin-Vaisband"],"reviews":0,"subject":"physics.ins-det","summary":"Superconducting films native to a commercial CMOS process enable co-integration of superconducting devices (high-kinetic-inductance elements and nanowire detectors) with cryogenic CMOS on one monolithic die. Such films are buried in the front-end-of-line, beneath the back-end-of-line metal stack, an environment that might quench a self-heated hot spot. Current-voltage characteristics are reported for titanium nitride (TiN) nanowires in the polycrystalline-silicon resistor layer of a 22 nm FD-SOI process, and measured retrapping currents are compared with thermal models for longitudinal…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-09-28","reactions":{}}