{"id":"arxiv/2610.30375","url":"https://arxiv.org/abs/2610.30375","tags":["quant-ph","cond-mat.mtrl-sci"],"score":0,"title":"Delta-Doped GeV$^-$ in diamond with isotope resolvable optical spectra","domain":"quant-ph","source":"arxiv","authors":["Ian N. Hammock","Kinfung Ngan","Antoni W. Wellisz","Keira Linder","Midrel Wilfried Ngandeu Ngambou","Jiefei Zhang","Xinghan Guo","Benjamin Pingault","Shuo Sun","David D. Awschalom","F. Joseph Heremans","Alexander A. High","Nazar Delegan"],"reviews":0,"subject":"quant-ph","summary":"Group IV color centers in diamond -- silicon, germanium, tin, and lead-vacancy centers -- are a promising platform for quantum networking. Typical Group-IV creation utilizes ion implantation during diamond growth that leaves the color centers with a broad depth distribution and damage-induced strain inhomogeneity. Deterministic placement and damage reduction in Group IV generation are essential for improving this platform. In this letter, we report on the localization of germanium-vacancy (GeV$^-$) to a $<$ 10 nm layer via the timed injection of GeH$_4$ during microwave plasma chemical vapor…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-10-21","reactions":{}}