{"id":"arxiv/2610.35768","url":"https://arxiv.org/abs/2610.35768","tags":["cond-mat.supr-con","cond-mat.mtrl-sci","quant-ph"],"score":0,"title":"Growth Phase Map of α and \\b{eta} Tantalum as a Function of Growth Temperature and Oxygen Partial Pressure","domain":"cond-mat.supr-con","source":"arxiv","authors":["Marius O. Eji","Tyler J. Kirkpatrick","Ty J. Cawein","Joseph P. Corbett"],"reviews":0,"subject":"cond-mat.supr-con","summary":"Tantalum thin films are used in low-loss superconducting quantum circuits, yet the growth conditions governing selection of $α$-Ta(110), $α$-Ta(111), and metastable $β$-Ta on c-plane sapphire remain uncertain. We deposited 100 nm Ta films by dc magnetron sputtering on Al$_2$O$_3$(0001) at 300-900 $^\\circ$C while varying the O$_2$ partial pressure from a $5.5\\times10^{-11}$ Torr ultrahigh-vacuum baseline to $2.23\\times10^{-4}$ Torr. Absorption-corrected X-ray diffraction texture coefficients were used to construct a ternary phase-orientation growth map in terms of temperature and the…","category":"research","comments":0,"disputed":false,"division":"physics","mentions":0,"discussed":0,"published":"2026-10-26","reactions":{}}