Spectral tuning of single T centres by the Stark effect

Source: arxiv.org/abs/2604.25170

Michael Dobinson, Felix Hufnagel, Simon A. Meynell, Camille Bowness, Melanie Gascoine, Walter Wasserman, Prasoon K. Shandilya, Christian Dangel, Michael L. W. Thewalt, Stephanie Simmons, Daniel B. Higginbottom

arXivarxiv/2604.25170Apr 28, 2026quant-phscore 0

Among the many solid-state emitters being explored for scalable quantum technologies, the silicon T centre is a leading candidate offering long-lived spin qubits, a telecommunications-band spin-photon interface, and integration with on-chip photonic circuits. However, nanophotonic integration broadens both the inhomogeneous spectral distribution and individual emitter linewidths. Here, we integrate single T centres into silicon nanophotonic cavities with p-i-n diodes for local electronic control. These devices enable Stark tuning up to 30 GHz, sufficient to bring 55(2)% of on-chip T centres…

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