Electronic Band Structure of Silicon Determined via a Variational Adiabatic Eigensolver: Theory and Experiment

Source: arxiv.org/abs/2606.16604

Xingrui Liu, Liyang Sui, Tianqi Cai, Zhiwen Zong, Kunliang Bu, Wenyan Jin, Bowen Chen, Xutao Zhang, Yufan Li, Zhihao Gong, Yicong Zheng, Shengyu Zhang, Jianlan Wu, Yi Yin

arXivarxiv/2606.16604Jun 15, 2026quant-phscore 0

This work addresses the critical challenge of excited-state preparation for semiconductor band structure calculations. We introduce a variational adiabatic eigensolver (VAE) protocol that combines adiabatic evolution with variational optimization to prepare high-fidelity eigenstates on noisy intermediate-scale quantum (NISQ) devices. Applying a momentum-space truncation, we accurately compute the electronic band structure of silicon -- an idealized infinite periodic system -- using only a modest number of qubits. Our approach employs multi-qubit parameterized circuits and a phase-based loss…

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