Silicon-Germanium Heterostructures with Enhanced Valley Splitting for Spin Qubits

Source: arxiv.org/abs/2607.09652

David W. Kanaar, Efrain Martinez, Peihong Zhang, Mark F. Gyure

arXivarxiv/2607.09652Jul 10, 2026cond-mat.mes-hallscore 0

Achieving valley splittings well in excess of the thermal energy of electrons and avoiding valley excitations is essential for the consistent initialization, operation and readout of gate-defined Si spin qubits. In this work, we present a device-level optimization strategy for pushing valley splittings to between 1 and 5 meV, well beyond values reported in nearly all previous theoretical studies. Using device-scale simulations that incorporate atomistic alloy disorder through a 1D tight-binding theory, we demonstrate that our proposed approach yields large valley splittings with a tight…

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