Quantum Simulation of Si/SiGe Devices with Experimentally Calibrated Micromagnet Effects

Andrii Sokolov, Conor Power, Mathieu Moras, Claude Rohrbacher, Brian Malone, Sergey Amitonov, Agostino Apra, Amir Sammak, Nodar Samkharadze, Elena Blokhina

arXivarxiv/2609.27724Sep 23, 2026quant-phscore 0

Silicon-based spin qubits in Si/SiGe heterostructures are a leading platform for scalable quantum computing, yet bridging the gap between theoretical computer-aided design(CAD) models and experimental reality remains a significant challenge. Standard simulations often fail to capture critical physical phenomena, such as interface dipoles, parasitic charge accumulation, and the magnetic hysteresis of on-chip micromagnets. In this work, we present a comprehensive, experimentally calibrated 3D simulation pipeline for a 6-dot Si/SiGe device. We refine the semiconductor band alignment and…

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