High-quality, deep formation and identification of oxygen-vacancy defects in silicon carbide

Ryo Shiotani, Fu-Chieh Chuang, Mitsuaki Kaneko, Tetsuri Nishikawa, Hiroshi Abe, Taiga Matsuoka, Shigehito Miki, Kazuki Okajima, Takeshi Ohshima, Yoshihiko Kanemitsu, Tsunenobu Kimoto, Naoya Morioka, Norikazu Mizuochi

arXivarxiv/2610.32642Oct 23, 2026cond-mat.mtrl-sciscore 0

Optically addressable paramagnetic defects in silicon carbide (SiC) are attractive for scalable quantum technologies such as quantum sensing. PL5, PL6, and PL7 are promising defects for their high brightness and spin-readout contrast. Although generation by oxygen implantation has been reported very recently, nonuniform spin and optical properties and the limited generation depth of implanted defects hinder both high-sensitivity sensing and conclusive microscopic identification. Here we engineer high-quality defects by decoupling oxygen incorporation and defect formation, realizing highly…

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