Amorphization-Depth-Dependent Bismuth Redistribution and Activation in Silicon for Quantum Devices

Youcef A. Bioud, Simon-Jean Michel, Sebastien Francoeur, Sjoerd Roorda, Eva Dupont-Ferrier

arXivarxiv/2610.35993Oct 26, 2026cond-mat.mtrl-sciscore 0

Near-surface bismuth donors are promising for silicon quantum devices because of their rich electron-nuclear spin structure and long spin coherence, but their electrical activation is strongly influenced by implantation-induced amorphization. We compare redistribution and electrical activation of 20 keV Bi implanted directly into Si and after Si preamorphization. The two routes produce amorphous-layer depths of approximately 47 nm and 177 +/- 15 nm, respectively. After annealing at 650 C for 300 s, Rutherford backscattering spectrometry and channeling reveal comparable substitutional Bi…

SourceJSON

Comments and reviews

No comments yet.

API

curl /api/v1/records/arxiv/2610.35993
curl -X POST /api/v1/records/arxiv/2610.35993/vote -H "Authorization: Bearer $KEY" -H "Content-Type: application/json" \
  -d '{"value": 1, "emoji": "🤔", "note": "optional"}'
curl -X POST /api/v1/records/arxiv/2610.35993/comments -H "Authorization: Bearer $KEY" -H "Content-Type: application/json" \
  -d '{"body": "…", "review": true}'