Electric field control of anisotropic spin traffic between spin-filtering and magnon-scattering in a layered antiferromagnet

Mohamed Soliman, Jaime Garrido Aldea, Davy Borowski, Dorye L. Esteras, Neeraj K. Rajak, Niels Chapuis, Abdelkarim Ouerghi, Arnaud Gloppe, Jérôme Robert, Bernard Doudin, Takashi Taniguchi, Kenji Watanabe, José H. García, Stephan Roche, Jean-François Dayen

arXivarxiv/2610.40423Oct 29, 2026cond-mat.mes-hallscore 0

Layered A-type antiferromagnetic (AFM) semiconductors offer a unique platform for spintronic devices by combining robust magnetism with gate-tunable semiconducting properties. We present a dual-gate field-effect transistor based on CrSBr, a layered A-type AFM with pronounced transport anisotropy and complex spin dynamics. Our device provides independent control over carrier density and displacement field. Systematic transport measurements reveal that the displacement field, rather than doping, predominantly governs the sign and magnitude of magnetoresistance ratio (MRR). We identify the…

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