Void-Free Through-Glass Vias for Multilayer Surface-Electrode Ion Traps

Eike Iseke, Jacob Stupp, Friederike Giebel, Nila Krishnakumar, Konstantin Thronberens, Nora D. Stahr, Md. Masum Billah, Marlon Kuhn, Christian Ospelkaus

arXivarxiv/2610.19736Oct 14, 2026quant-phscore 0

Through-substrate interconnects are a key technology for scaling surface-electrode ion traps (SEITs) toward large electrode counts and complex architectures. Dielectric substrates such as fused silica offer superior RF performance compared to silicon, but the reliable fabrication of void-free through-glass vias (TGVs) remains challenging. In this work, we demonstrate a SEIT fabricated on a fused silica substrate incorporating TGVs. The via-holes are formed using Selective Laser-Induced Etching and subsequently metallized with gold by electroplating. A patent-pending geometry-assisted…

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