Delta-Doped GeV$^-$ in diamond with isotope resolvable optical spectra

Ian N. Hammock, Kinfung Ngan, Antoni W. Wellisz, Keira Linder, Midrel Wilfried Ngandeu Ngambou, Jiefei Zhang, Xinghan Guo, Benjamin Pingault, Shuo Sun, David D. Awschalom, F. Joseph Heremans, Alexander A. High, Nazar Delegan

arXivarxiv/2610.30375Oct 21, 2026quant-phscore 0

Group IV color centers in diamond -- silicon, germanium, tin, and lead-vacancy centers -- are a promising platform for quantum networking. Typical Group-IV creation utilizes ion implantation during diamond growth that leaves the color centers with a broad depth distribution and damage-induced strain inhomogeneity. Deterministic placement and damage reduction in Group IV generation are essential for improving this platform. In this letter, we report on the localization of germanium-vacancy (GeV$^-$) to a $<$ 10 nm layer via the timed injection of GeH$_4$ during microwave plasma chemical vapor…

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