Growth Phase Map of α and \b{eta} Tantalum as a Function of Growth Temperature and Oxygen Partial Pressure
Tantalum thin films are used in low-loss superconducting quantum circuits, yet the growth conditions governing selection of $α$-Ta(110), $α$-Ta(111), and metastable $β$-Ta on c-plane sapphire remain uncertain. We deposited 100 nm Ta films by dc magnetron sputtering on Al$_2$O$_3$(0001) at 300-900 $^\circ$C while varying the O$_2$ partial pressure from a $5.5\times10^{-11}$ Torr ultrahigh-vacuum baseline to $2.23\times10^{-4}$ Torr. Absorption-corrected X-ray diffraction texture coefficients were used to construct a ternary phase-orientation growth map in terms of temperature and the…
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